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A stoichiometric mixture of evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610 o C and 400 o C, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.34 eV − (8.81 × 10 −4 eV/K)T 2 /(T + 251 K). The crystal field and the spin-orbit splitting energies for the valence band of the MgGa2Se4 have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ∆so definitely exists in the Γ5 states of the valence band of the MgGa2Se4/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C27-exciton peaks for n = 27.

Photocurrent Study on the Splitting of the Valence Band and Growth of CuAlSe2Single Crystal Thin Film by Hot Wall Epitaxy

Photocurrent Study on the Splitting of the Valence Band and Growth of CuAlSe₂Single Crystal Thin Film by Hot Wall Epitaxy