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The paper is devoted to the study of the process of optimizing the semiconductor strain-gauge transducer on the structure of the SOS. As an object of the study, an elastic membrane-type element with a semiconductor strain-gauge in the form of a silicon-on-sapphire structure was used. To study the surface of sapphire, the optical photolithography method was used. In the framework of this task, the control parameters and the quality parameters of the serially-manufactured strain gauge were determined. The paper describes the methodology for multicriteria optimization, and also an optimization calculation for the strain-gauge on the SOS. The main result is the obtaining of Pareto-optimal design variants that exceed the basic variant by all quality criteria.

OPTIMIZATION OF SEMICONDUCTOR PRESSURE TRANSDUCER WITH SENSITIVE ELEMENT BASED ON “SILICON ON SAPPHIRE” STRUCTURE