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This work is focused on controlling the polarization anisotropy of emission from single self-assembled InAs/InGaAlAs quantum dashes grown by molecular beam epitaxy on InP substrate. We studied the degree of linear polarization of excitonic emission for submicrometer mesa photonic structures of asymmetric inplane geometry. We present both experimental and numerical analysis performed at 1550 nm wavelength (3 telecommunication window for optical fibers), and we discussed the impact of anisotropy of the dielectric confinement, which paves the way towards a single photon source characterized by a degree of linear polarization exceeding 0.9.

Highly Linearly Polarized Emission from Quantum Dash Excitons - Modelling and Experiment at the 3rd Telecom Window