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Ferroelectric materials have superior dielectric properties but the processing conditions of thin ferroelectric films influence their dielectric properties and thus affect the performance of devices which employ them. A detailed characterization is carried out for lead zirconate titanate (PZT) and lead niobate zirconate titanate (PNZT) thin films in this work by employing planar-circuit structures. The films were applied to built microwave capacitors and co-planar waveguide transmission lines. S-parameter measurements were performed from 40 MHz to 20 GHz using wafer probes in conjunction with a vector network analyzer. The results show the loss tangent and relative permittivity of the films vary with frequency, with typical permittivity values of the order of 110 to 350 and 200 to 780 for PZT and PNZT, respectively, over the said frequency range. The investigation revealed the effect of dielectric polarization of the films over the broad frequency range. The transmission lines showed acceptable insertion losses of the order of 17 dB from 5 to 20 GHz for lines of length 100 μm and width 5 μm fabricated on PNZT films 1 μm thick. These figures demonstrate the feasibility of using thin ferroelectric films as a new substrate material for monolithic microwave integrated circuits (MMIC).

PZT AND PNZT-BASED THIN FILM CAPACITORS AND TRANSMISSION LINES FOR MICROWAVE INTEGRATED CIRCUIT APPLICATIONS