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Field-effect hydrogen gas sensor devices were fabricated with the structureof a series connection between Schottky junctions and β-Ga2O3/6H-SiC heterojunctions. β-Ga2O3 thinfilms were deposited on n-type and p-type 6H-SiC substrates by galliumevaporation in oxygen plasma. These devices have rectifying properties andwere characterized as hydrogen sensors by a Pt electrode. The hydrogen-sensingproperties of both devices were measured in the range of 300–500 °C. The Pt/Ga2O3/n-SiC device revealed hydrogen-sensingproperties as conventional Schottky diode-type devices. The forward currentof the Pt/Ga2O3/p-SiC device was significantly increased underexposure to hydrogen. The behaviors of hydrogen sensing of thedevices were explained using band diagrams of the Pt/Ga2O3/SiCstructure biased in the forward and reverse directions

journal of sensors and sensor systems

Devices based on series-connected Schottky junctions and β-Ga&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;O&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt;/SiC heterojunctions characterized as hydrogen sensors