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In current process technologies, NBTI (negative bias temperature instability)has the most severe aging effect on static random access memory (SRAM)cells. This degradation effect causes loss of stability. In this papercountermeasures against this hazard are presented and quantified viasimulations in 90 nm process technologies by theestablished metrics SNMread, SNMhold, Iread andWrite Level. With regard to simulation results and practicabilitybest candidates are chosen and, dependent on individual preferencesat memory cell design, the best countermeasure in each case is recommended

Countermeasures against NBTI degradation on 6T-SRAM cells