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The paper presents the results from the study of thin-film humidity sensor elements on the basis of TiO2 obtained by a sol-gel method and doped with various compounds. The impact of the dopants on the sensor characteristics has been investigated. Titanium n-butoxide is used as a starting material for the preparation of the experimental samples. Bismuth acetate, vanadium pentadionate and sodium butoxide have been used as doping agents. The film is applied through the dip-coating method of the ceramic substrates in the obtained film-forming solution with subsequent drying in air environment. The dependence of resistance on humidity, sensitivity and response time of the sensor were investigated. Impedance characteristics and equivalent electric circuits were obtained.

P3.5 - Impact of Dopants on the Characteristics of Thin-Film Humidity Sensor Elements