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Two-dimensional (2D) wafer-scale -MoO3 films with thickness of 4.9 nm were fabricated via atomic layer deposition (ALD) technique. The developed MoO3 films were composed of flat nanoparticles with the average size of about 35 nm and possessed layered orthorhombic phase ( -MoO3). The electrochemical sensor based on these -MoO3 films exhibited the greatest sensitivity of 168.72 μA·mM-1·cm-2 to hydrogen peroxide (H2O2) amongst all the others MoO3 electrochemical sensors reported-to-date and presented extremely wide linear detection range of 0.4 μM 57600 μM with the lowest detection limit of 0.038 μM at the signal to noise ratio of 3. Furthermore, due to extremely thin -MoO3 films ultra-fast response/recovery time was achieved with response/recovery time range of 0.45/0.5 s 1.5/1.95 s under the concentration range of 0.4 μM 50000 μM. Additionally, the superiority with great long-term stability, excellent selectivity and high reproducibility was also achieved among the different -MoO3 samples. The 2D -MoO3 films fabricated via ALD technique in this work represent a great opportunity for development of the high-performance electrochemical sensors based on 2D transition metal oxides.

P1NM.1 - Wafer-scale two-dimensional ALD-developed α-MoO3 for ultra-sensitive, stable and selective hydrogen peroxide sensing