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Indium oxide (In2O3) has been employed for gas sensors as an important candidate. Here we demonstrated the sensitive gas sensors based on In2O3 quantum dots synthesized via solvetheramal methodology. A room-temperature films deposition was utilized for sensor fabrication, followed by the Cu salt surface ligand exchange with a moderate annealing treatment. The In2O3 CQD-based gas sensors exhibited an excellent H2S-sensing performance with the response up to 90 upon 5 ppm H2S with a fast response and recovery time being 72 s and 200 s at the low operating temperature of 37 °C. Their sensitive response and recovery properties combined with the low-temperature fabrication and operation, rendering the devices amenable to rapid H2S detection with lower power consumption in practical application.

P1GS.15 - Sensitive and Selective H2S Gas Detection at Low Temperature Employing In2O3 Quantum Dots