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In this work, we investigate the hydrogen (H2) gas sensing performance in a p-type FET sensor having a floating-gate (FG) and a control-gate (CG) placing each other. Single-walled carbon nanotubes (SWNTs) are formed between the CG and FG by an inkjet-printing method to be used as a sensing layer. Then, SWNTs are decorated with palladium (Pd) by an electroplating method. The H2 gas responses are studied by measuring the transfer characteristics (ID-VCG) and transient currents (ID) with different H2 concentrations under various CG biases (VCGs). As the H2 concentration increases from 0.02% to 1%, the sensitivity of H2 gas increases and then starts to saturate regardless of operation region of FET-type sensor. The saturation is caused by a decrease in work-function, resulting from the diffusion of H2 and the generation of H2O.

GS9.1 - A Novel FET-type Hydrogen Gas Sensor with Pd-decorated Single-Walled Carbon Nanotubes by Electroplating Method