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In this paper, a field-effect transistor (FET) humidity sensor having horizontal floating-gate (FG) and control-gate (CG) is investigated. Branched polyethylenimine (PEI) is formed on the FET platform for the humidity detection. The inkjet printing process is adopted to deposit the sensing layer, which is convenient and low cost. The humidity sensing properties of the proposed sensor are measured at room temperature. The response, response time and recovery time of the sensor are 415%, 3 min and 13 min for 20% relative humidity (RH), respectively. The sensing mechanism is also explained from the perspective of the ion motions in the sensing material.

FE.4 - Inkjet-Printed PEI FET-Type Humidity Sensor Having a Horizontal Floating-Gate