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Implementations of artificial synapse and neuron are presented by combining the silicon nanowire ionsensitive field-effect transistor (ISFET) and the indium-gallium-zinc-oxide (IGZO) memristor. Chemical and electrical operations of synapse are emulated by the pH sensor operation of ISFET and by the long-term potentiation of IGZO memristor, respectively. The concentration of hydrogen ions in electrolyte is successfully transformed via the voltage-controlled oscillator (VCO)-based neuron into the modulation of synaptic strength, i.e., the current of memristor. Proposed synapse and neuron show the feasibility of emulating the brain-inspired computing along with taking into accounts both chemical and electrical operation of synapse.

AP2.2 - Artificial Synapse and Neuron Combining the Ion-Sensitive Field-Effect Transistor and Memristor