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An OLED-based gas sensor is fabricated with the device structure as ITO/N,N’-bis(naphthalen-1-yl)N,N’-bis(phenyl)-benzidine (NPB)(30 nm)/tris(8-hydroxy-quinolinatoo)aluminium (Alq3)(50 nm)/poly(3hexylthiophene-2,5-diyl) (P3HT)(x nm)/Mg: Ag (300 nm). The P3HT is applied as the sensitive layer in the OLED-based gas sensor, while red light emission can be observed from the OLED. The response of the device in NO2 and NH3 circumstance is investigated respectively by analyzing its effect on variation of the current density. The results show that the NO2 concentration has an obvious influence on the current density of the device, and the current density decreases faster under the higher NO2 concentration. Meanwhile, the current density of the device increases when it is exposed in the NH3 circumstance. The sensing mechanism of the device is also discussed.

P1.8.8 Fabrication and properties of an OLED-based gas sensor with poly(3-hexylthiophene) sensing film