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An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect\udtransistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.\udThe model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent\udmobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of\udthe developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have\udbeen evaluated to determine the output characteristics, device transconductance and cut-off frequency for\ud50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been\udobtained. The results so obtained are in close agreement with experimental data, thereby proving the\udvalidity of the model.\u

Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications