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This paper investigates the effect of process variations on unity gainfrequency (ft) in 30 nm gate length FinFET by performing extensive TCADsimulations. Six different geometrical parameters, channel doping, source/draindoping and gate electrode work function are studied for their sensitivity onft. It is found that ft is more sensitive to gate length, underlap, gate-oxidethickness, channel and Source/Drain doping and less sensitive to source/drainwidth and length, and work function variations. Statistical modelling has beenperformed for ft through design of experiment with respect to sensitiveparameters. The model has been validated through a comparison between randomset of experimental data simulations and predicted values obtained from themodel.

Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets