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The performance based analysis for typical Gaussian and Gaussian-Halo Doped Double Gate MOSFETs in conjunction with Normal Doped DG MOSFETs, for which different parameters such as Oxide Thickness, Ambient Temperature, Gate Material Work Function and Substrate Doping Concentration is varied. This analysis has been carried out using a TCAD Lab simulation.. From the results obtained, it will be quite clear that the sub-threshold leakage current of the Gaussian and Gaussian-Halo Doped Double Gate Metal Oxide Semiconductor FET is relatively lesser. Furthermore the results have been plotted with different Drain voltage values to enhance the understanding of the physics behind various Doping Profiles in Double Gate MOSFET. Finally the results has been obtained, analysed and compared. The Possession of higher Drain current Performance is very acceptable through the rigorous analysis using a TCAD Lab.

Investigational Insight On Gaussian And Gaussian-Halo Doped Double Gate Mosfets