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In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors. The considered approach based on manufacturing a heterostructure with necessity configuration, doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity (p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis technological process.

On Increasing of Density of Elements in a Multivibrator on Bipolar Transistors