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Polarized Raman spectra on heavily Be-doped p-GaAs have been measured in a hole density range from 3.5 × 1018 to 2.9 × 10 cm-3. The dominant Raman scattering mechanisms by the coupled longitudinal optical phonon-hole-plasmon modes are shown to be the deformation potential mechanism (u) and the electro-optic mechanism (E). The charge density fluctuation mechanism is prodicted to be 600 times weaker than the previous two mechanisms.

Raman Scattering Mechanism by the Coupled Longitudinal Optical Phonon-Plasmon Modes in Heavily Doped p-GaAs.