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Infrared absorption spectroscopy is being adopted to investigate the band structure and impurity-energy levels of semiconductor materials such as Si and Ge, etc.Usually the wave length regions for investigating these problems are 1-2/μfor band structure and 20-50μfor impurity levels.In the region of 5-16μ, optical interference phenomenon of thin wafers, 50-200μ in thickness, made of Si and Ge single crystals is studied by infrared absorption spectroscopy.The interference was found very sensitive for the thickness and surface treatment of the crystals.

Interference Phenomena of Silicon and Germanium Single Crystal Wafers by Infrared Spectrophotometry