Study on Gate Bias Voltage Application Conditions to Prevent the Knee Voltage Shift of the SiC–MOSFET Body Diode Depending on Gate Bias Voltage during Transient Temperature Measurements | Zendy

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Study on Gate Bias Voltage Application Conditions to Prevent the Knee Voltage Shift of the SiC–MOSFET Body Diode Depending on Gate Bias Voltage during Transient Temperature Measurements

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