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ABSTRACT. We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronicproperties of this film using electrochemical impedance spectroscopy. Al oxide film consisted Al 2 O 3 was grown based on the pointdefect model and shown the eclctronic properties of n-type semiconductor. Keywords: Aluminum oxide, Passive film, Oxide film, n-Type semiconductor, Mott-Schottky   Al     ․ *   ( 2010. 4. 28;  2010. 5. 18;  2010. 5. 26) Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution Jung-Kyoon Chon and Younkyoo Kim * Department of Chemistry, College of Natural Science, Hankuk University of Foreign Studies, Yongin, Kyunggi-Do 449-791, Korea (Received April 28, 2010; Revised May 18, 2010; Accepted May 26, 2010)       (oxide film)     ,                     .