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detection, Size effects, InAs, Quantum membranesSensors employing semiconductor materials as a sensingelement typically use the configuration of field-effect tran-sistors (FETs), to detect conductance changes in response togas exposures. Such responses depend on how effectivelythe adsorption or reaction of gas molecules on the materialsurface can modulate the channel potential inside thematerials. Thus, it makes semiconductor nanomaterials

Realization of a Gas Sensor Using Ultrathin InAs Nanoribbon Membranes for NO2Detection at Parts-per-Billion Levels

Realization of a Gas Sensor Using Ultrathin InAs Nanoribbon Membranes for NO₂Detection at Parts-per-Billion Levels