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, Dimethylaluminum isopropoxide (DMAI), Single precursor, β-Hydrogen elimination, Non-volatile memoryIntroductionChemical vapor deposition (CVD) has been regarded asone of promising techniques for high quality thin filmsbecause it has some advantages over other methods such asgood uniformity, controllability of thickness with a lowdefect density, and better step coverage, etc.

bulletin of the korean chemical society

Non-stoichiometric AlO<sub>x</sub>Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

Non-stoichiometric AlOxFilms Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

Non-stoichiometric AlO_xFilms Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics