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E-mail: iwshim@cau.ac.krRecevied September 5 20, 05Key Words : Cadmium selenide C, dSe Dis, elenocarbamate, MOCVD Sing, le-source precursorCdSe is one of the well known II-VI semiconductormaterials having a band gap of 1.74 eV, suitable for photo-voltaic cell, light emitting diodes, and thin film transistors(TFTs).

CdSe Thin Films Grown by MOCVD Method Using New Single-source Precursors