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isstudied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from thesurface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PLemission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitoryincrease to reach a saturation with the annealing time, however, the red shift increased continuously because ofthe Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of thediminishment of quantum confinement. A strong enhan cement of PL intensity by H passivation was confirmedalso, and the possible mechanism is discussed.Key Words : Silicon, Nanocrystal, Photoluminescence, PassivationIntroductionBulk Si crystal does not emit photoluminescence becauseof its indirect band gap. But strong visible photolumine-scence is observed from Si nanocrystals in SiO

Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis