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Al 2 O 3 thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAI: (CH 3 ) 2 AlOCH(CH 3 ) 2 ], as a new Al precursor, and water by atomic layer deposition (ALD). The self-limiting ALD process by alternate surface reactions of DMAI and H 2 O was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-H 2 O cycles. Under optimal reaction conditions, a growth rate of ∼1.06 A per ALD cycle was achieved at the substrate temperature of 150 °C. From a mass spectrometric study of the DMAI-D 2 O ALD process, it was determined that the overall binary reaction for the deposition of Al 2 O 3 [2 (CH 3 ) 2 AlOCH(CH 3 ) 2 + 3 H 2 O → Al 2 O 3 + 4 CH 4 + 2 HOCH(CH 3 ) 2 ] can be separated into the following two half-reactions: (A) AIO H * + (CH 3 ) 2 AlO C H(CH 3 ) 2 → Al-O - Al(O C H(CH 3 ) 2 ]* + CH 4 ∩ (B) Al[O C H(CH 3 ) 2 ]* + H 2 O → AlO H * + HO C H(CH 3 ) 2 ∩ where the asterisks designate the surface species. Growth of stoichiometric Al 2 O 3 thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an Al 2 O 3 film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the Al 2 O 3 film and the Si substrate. C-V measurements of an Al 2 O 3 film showed capacitance values comparable to previously reported values.

bulletin of the korean chemical society

Preparation of Al<sub>2</sub>O<sub>3</sub>Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

Preparation of Al2O3Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

Preparation of Al₂O₃Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms