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We report a microwave heating system with a carbon heating tube (CHT) made by a 4-mm diameter quartz tube filled carbon particles and Ar gas at 1400 Pa. 2.45-GHz microwave at 200 W was introduced to a 300-dimameter metal cavity, in which 60-mm-long CHT was set at the central position. The numerical simulation with a finite element moment method resulted in the standing wave of the electric field caused by three dimensional Fresnel interference effect with low high electric field intensity ranging from from 1 to 6 kV/m because of effective absorption of microwave power by the CHT. The lowest average electrical field intensity of 5 kV/m in the cavity space was given by the electrical conductivity of carbon ranging from 10 to 55 S/m. The CHT with 55 S/m heated to 1200 o C by microwave irradiation at 200 W. This heating method was applied to activate 1.0x10 15 -cm -2 boron and phosphorus implanted regions in n-type crystalline silicon substrate to fabricate pn junction and solar cells. The CHT heating at 1200 o C realized decrease in the sheet resistivity to 146 Ω/sq, decrease in the density of defect states to 1.3x10 11 and 9.2x10 10 cm -2 for boron (p+) and phosphorus (n+) implanted surfaces, and solar cell characteristic with a conversion efficiency of 15% under illumination of air mass 1.5 at 0.1 W/cm 2 .

MICROWAVE RAPID HEATING SYSTEM USING CARBON HEATING TUBE