English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper, the enhancement-mode operation of the hetestructure of GaN/InN/GaN/In 0.1 Ga 0.9 N of the Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMTs) device having lnN-channel was investigated. The effect of scaling the device dimensions of Metal Insulator, such as the dielectric thickness of HfO 2 and the channel lengths, on the electrical performances was analyzed and compared to the currently used heterostructure. The numerical simulation of synopsis TCAD used showed a significant improvement in the electrical properties of the device that achieved a threshold voltage (V T ) = 0.828 maximum drain current of 1.77 A/mm V, transconductance (g m ) of 2.29 S.mm −1 , lowest ON-state resistance (R ON ) of 0.21 Ω.mm, and along with high-frequency performance achieving f T / f max of 98 GHz/129 GHz and 200 GHz/ 360 GHz respectively. The simulations also showed that this scaled GaN/ InN/ GaN/ In 0.9 Al 0.1 N heterostructure MIS-HEMT is an excellent substitute to the currently used MIS-HEMTs for delivering high power density and frequency at RF/power amplifier applications. Keywords: Enhancement mode, Hydrodynamic simulation, InN channel, MIS-HEMT, In 0.9 Al 0.1 N barrier/buffer, HfO 2 , TCH, Transconductance

nigerian journal of technology

Optimization of insulated HfO&lt;sub&gt;2&lt;/sub&gt; dielectrics of GaN/InN/GaN/ In&lt;sub&gt;0.1&lt;/sub&gt;Ga&lt;sub&gt;0.9&lt;/sub&gt;N enhancement mode of MIS-HEMT heterostructure for high frequency power amplifier applications