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Although the CdS buffer layer has several advantages such as its wide bandgap, its relatively high carrier density, etc..., one of the major drawbacks of this latter is the presence of cadmium, a toxic element, even in small amounts. Research work, currently, are shifted on the possibility of replacing CdS by a buffer layer devoid of cadmium. Among non-toxic buffer layers studied in the literature, we cite In2S3, ZnS, ZnSe and SnS2. This manuscript presents the numerical study, using the SCAPS-1D program, the effects of the sulfur content in the buffer layer Zn (O,S) on the electrical parameters of the solar cell ZnO: Al / i-ZnO / Zn (O, S) / CZTS /. Material parameters used in this simulation were selected on the basis of literature values. Changes in the band gap and electron affinity of Zn (O, S) were calculated from the law of Vegard. The numerical results found, for a thickness of the absorbent layer CZTS equal to 2.5µm, show that from the sulfur content equals to 45% the efficiency varies only slightly, and is about 19%. The maximum relative error, over the efficiency of the same cell with CdS buffer layer does not exceed 1.5%, value that can be reduced by increasing the thickness of the absorbent layer CZTS.

Numerical simulation of solar cells besed CZTS buffer layer (ZnO<sub>1-X</sub>S<sub>X</sub>) using SCAPS-1D software