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Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and theirelectrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have goodprogram/erase (P/E) characteristics and a large threshold voltage (VT) shift of 2.5 V in 1ms using a gate pulse of +14 V.The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, whichbecomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation asthe nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction areais significantly reduced in the SiNW structure

The Short Channel Effect Immunity of Silicon Nanowire SONOS Flash Memory Using TCAD Simulation