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Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has beensuggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoringcapability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically establishedmethods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysisof plasma etch process and this is done by investigating reactants and by-product gas species that reside in theplasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients.Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present theimportance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peakselection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosionduring a series of SiO2 etch processes using the same recipe. From the experimental verification, we convinced thatOES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis ofsuspicious plasma behavior

Actinometric Investigation of In-Situ Optical Emission Spectroscopy Data in SiO2Plasma Etch

Actinometric Investigation of In-Situ Optical Emission Spectroscopy Data in SiO₂Plasma Etch