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In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapordeposition (PECVD) were investigated through various characterization techniques. The results show that, with anincrease in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas therefractive index increases. This is mainly due to the incorporation of organic molecules with CH3 group into the Si-OSicage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 cm-1 correspondingto Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fastthermal annealing process, the leakage current density of the deposited films is in the order of 10-11 A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test

Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD)