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In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a /Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power

The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma

The Dry Etching Properties on TiN Thin Film Using an N₂/BCl₃/Ar Inductively Coupled Plasma