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The growth and characterization of narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.

transactions on electrical and electronic materials/transactions on electrical and electronic materials

The Structural-Dependent Characteristics of Rashba Spin Transports in In0.5Ga0.5As/In0.5Al0.5As Heterojunctions