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In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the thin film etch rate and the selectivity with . A maximum etch rate of 108.7 nm/min was obtained in (3 sccm)/ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of to reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the thin film increased. As the process pressure increased, the etch rate of the thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of thin film follows the ion-assisted chemical etching.

Etching Characteristics of HfAlO3Thin Films Using an Cl2/BCl3/Ar Inductively Coupled Plasma

Etching Characteristics of HfAlO₃Thin Films Using an Cl₂/BCl₃/Ar Inductively Coupled Plasma