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films have been fabricated using many different technologies, including sputtering [1], chemical vapor deposition [2], spray pyrolysis [3], and atomic layer deposition (ALD) [4], [5]. Amongst these ALD produces unique film properties compared with other methods. In particular dense films of high aspect ratio and fewer defects are achieved. ALD is also an ideal technology for the deposition of ultrathin films with high conformality and precise thickness control [6]. ALD is a dense thin film growth technology using an alternating self-controlled chemical process between the gas precursor and a solid surface in order to deposit materials in an atomic layer-by-layer fashion. This methodology can produce films with very precise control over film thickness and composition. This technology allows precise coatings to be applied on other surfaces of powder and porous materials. Plasma-enhanced ALD (PEALD) is a promising technology for obtaining high quality metal oxide films at relatively low temperatures compared with commercial CVD. Interestingly, the comparative study of the growth of tin oxide films by ALD and chemical vapor deposition was reported [7]. The films were of the tetragonal rutile-type for both cases. Thin films grown by ALD were found to be close to being perfect single crystals, containing a low density of defects and were almost atomically smooth. The CVD films had a much rougher film morphology and exhibited both grain boundaries and twin formation. Tin oxide thin films have been fabricated previously by ALD using halogenated precursors, SnCl

The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor