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The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-Bi2O3-Sb2O3-CoO- MnO2-NiO-Nd2O3 system, were investigated at various Y2O3 addition concentrations. Y2O3 played a role in the inhibition of the grain growth. As the Y2O3 content increased, the average grain size decreased from 6.8 ㎛ to 4 ㎛, and the varistor voltage(V1mA) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient (α) decreased from 72 to 65 with increasing Y2O3 amount. On the other hand, the leakage current (IL) increased from 0.2 to 0.9 ㎂. These results confirmed that doping the varistors with Y2O3 is a promising production route for production of a higher fine-grained varistor voltage (V1mA) which can dramatically reduce the size of the varistors. [DOI: 10.4313/TEEM.2009.10.5.152

Voltage Enhancement of ZnO Oxide Varistors for Various Y2O3Doping Compositions

Voltage Enhancement of ZnO Oxide Varistors for Various Y₂O₃Doping Compositions