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Bottom-gate tin oxide (SnO2) thin film transistors (TFTs) were fabricated on N + Si wafers used as gate electrodes. 60-nm-thick SnO2 thin films acting as active layers were sputtered on SiO2/Al2O3 films. The SiO2/Al2O3 films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the SnO2 thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of SnO2 TFTs was measured as a function of the flow ratio of oxygen to argon (O2/Ar). The mobility variation with O2/Ar was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of SnO2 films. The mobility decreased with increasing O2/Ar. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of SnO2 films.

Analysis on the Field Effect Mobility Variation of Tin Oxide Thin Films with Oxygen Partial Pressure