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La0.5Sr0.5CoO3 (LSCO) electrode thin films with a resistivity of ∼ 1,600 μΩcm were grown on c-Al2O3 (0001) substrate. ZnSnO3 (ZTO) thin films with different thicknesses were directly grown on LSCO/c-Al2O3 (0001) substrates at a substrate temperature that ranged from 550 to 750°C using Pulsed Laser Deposition (PLD). The secondary phase Zn2SnO4 occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 μC/cm 2 and 48 kV/cm, respectively, were obtained in the ZTO film grown at 700°C in 200 mTorr.

Growth of ZnSnO3Thin Films on c-Al2O3(0001) Substrate by Pulsed Laser Deposition

Growth of ZnSnO₃Thin Films on c-Al₂O₃(0001) Substrate by Pulsed Laser Deposition