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In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

Characterization of the Crystallized ITO Thin Films Grown at Different Temperatures by Off-axis RF Magnetron Sputtering