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We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying mixing ratio and a fixed flow rate. The deposition temperature was held at which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from to at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable mixing ratio.

The Characteristics of Silicon Nitride Films Grown at Low Temperature for Flexible Display