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For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

The Phase-change Memory Characteristics of Ge1Se1Te2Thin Films for Sb Photo Doping

The Phase-change Memory Characteristics of Ge₁Se₁Te₂Thin Films for Sb Photo Doping