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We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of content in the targets. The thick GZO thin films with the lowest resistivity of are obtained by using the GZO (

Effects of Doping Concentration on the Properties of Ga-doped ZnO Thin Films Prepared by RF Magnetron Sputtering