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Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ--TMA-). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at , so that the Al-doped film of 5 at% shows the lowest resistivity () and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at demonstrates the superior resistivity ().

Electrical, Structural and Optical Characteristic Analysis of Al-doped ZnO Film Deposited by Atomic Layer Deposition