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This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to . At annealing temperature of , it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at .

Fabrication of a Au/Ni/Ti/3C-SiC Schottky Diode and its Characteristics for High-voltages