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The etching characteristics of ZnO and etch selectivities of ZnO to in /Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at (50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in / Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

A Study of Etching Characteristics of the ZnO Thin Film Using a SF6/Ar Inductively Coupled Plasma

A Study of Etching Characteristics of the ZnO Thin Film Using a SF₆/Ar Inductively Coupled Plasma