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In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the mixing ratio in the range of 0-15% in an HBr:Ar

Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3Gas Mixtures

Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF₃Gas Mixtures