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In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.

A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode