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The substrate temperature is an important factor for diamond films fabricated by hot filament chemical vapor deposition (HFCVD), which affects the grain size and quality of diamond films. In order to deposit polycrystalline diamond films with good quality on the cutting tool, the substrate temperature distribution needs to be further studied. Thus three-dimensional finite element simulations are used to investigate the temperature field with different arrangements of filaments which have profound influences on substrate temperature distribution. Based on the simulation results, the optimum parameters of distance away from drill points and gap between filaments are founded. Subsequently, experiments of depositing diamond films on WC-Co drills are conducted with the optimum values gained from the simulation results. Then, the as-fabricated diamond films are investigated by scanning electron microscopy (SEM) and Raman spectroscopy. The results indicate that the surface of drill are covered with a layer of continuous diamond films, which validate that the simulated deposition parameters are conducive and provide a new method to adjust the substrate temperature distribution in the CVD reactor for depositing diamond films.

Simulation of Substrate Temperature Distribution in Diamond Films Growth on WC-Co Tools Using HFCVD Method