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At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.

Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor